Found Description
About the role
In this leadership role, you will drive the development and industrialization of next-generation wide bandgap technologies, influencing both strategy and execution across our global manufacturing network.
What you will do
Lead the development, scaling, and industrialization of SiC MOSFET and GaN HEMT technologies across internal fabs and external foundries
Act as a technical authority in wide bandgap process integration, driving architecture definition and innovation
Own and deliver new manufacturing processes and optimization programs, ensuring best-in-class yield, performance, and reliability
Define and execute technology roadmaps, aligning innovation with long-term business strategy
Drive global cross-functional collaboration across R&D, production, quality, and external partners while representing the organization at senior level
Buil...
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Submit your application for (Senior) Principal Process Development Engineer (m/f/d) - Wide Bandgap Technology (SiC/GaN) at Nexperia
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