I

Principal Engineer - GaN Epitaxy Development

Infineon Technologies AG

singapore, singapore, Singapore Full-time July 10, 2026

Found Description

As a GaN Epitaxy Development Engineer on our Research & Development team, you'll merge creativity with technical expertise to shape the future of technology, driving groundbreaking projects and bringing new ideas to life.

Your Role

Epitaxial Growth & Recipe Development

  • Design GaN epitaxial structures (e.g., buffer layers, superlattices, and HEMT structures) based on specific device performance targets.
  • Direct hands‑on MOCVD (Metal‑Organic Chemical Vapor Deposition) recipe optimization.

Process Integration & Manufacturability

  • Transition new epitaxial processes from R&D into high‑yield, high‑volume manufacturing.
  • Address manufacturability hurdles like defect density, wafer stress, and layer uniformity.

Data Analytics & Metrology

  • Utilize Design of Experiments (DOE) and Statistical Process Control (SPC) to monitor and improve processes.
  • Analyze cha...

Ready to Apply?

Submit your application for Principal Engineer - GaN Epitaxy Development at Infineon Technologies AG

Apply Now