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Principal Engineer - GaN Epitaxy Development

Infineon Technologies

singapore, singapore, Singapore Full-time July 10, 2026

Found Description

#WeAreIn for jobs that impact everyone's life. Join the thinkers, builders, and problem‑solvers behind tomorrow’s technology. As a GaN Epitaxy Development Engineer on our Research & Development team, you'll have the opportunity to merge creativity with your technical expertise by shaping the future of technology, driving groundbreaking projects, and bringing new ideas to life. Are you in?

Your Role

Key responsibilities in your new role

Epitaxial Growth & Recipe Development
  • Design GaN epitaxial structures (e.g., buffer layers, superlattices, and HEMT structures) based on specific device performance targets
  • Direct hands‑on MOCVD (Metal‑Organic Chemical Vapor Deposition) recipe optimization
Process Integration & Manufacturability
  • Transition new epitaxial processes from R&D into high-yield, high-volume manufacturing
  • Address manufacturability hurdles like defect density, wafer stress, and layer unifor...

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